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Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
IXFH120N20P
IXFK120N20P
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
200V
120A
22m Ω
200ns
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
200
200
± 20
± 30
V
V
V
V
G
D
S
Tab
I D25
I LRMS
I DM
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
120
75
300
A
A
A
TO-264 (IXFK)
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
60
2
714
A
J
W
G
D
S
Tab
dV/dt
T J
T JM
T stg
T L
T SOLD
M d
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-247
TO-264
10
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
10
V/ns
° C
° C
° C
° C
° C
Nm/lb.in.
g
g
G = Gate D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Low Q G
Low R DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS(th)
I GSS
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 4mA
V GS = ± 20V, V DS = 0V
200
2.5
5.0
± 200
V
V
nA
Applications
DC-DC Coverters
Battery Chargers
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 150 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
25 μ A
500 μ A
22 m Ω
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
Applications
? 20109 IXYS CORPORATION, All Rights Reserved
DS99223F(02/10)
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相关代理商/技术参数
IXFK120N25
功能描述:MOSFET 120 Amps 250V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N25P
功能描述:MOSFET 120 Amps 250V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30P3
功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK120N30T
功能描述:MOSFET 120A 300V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N20P
功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N25T
功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK140N30P
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IXFK150N10
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